RECOMMENDED VALUES FOR THE THERMAL EXPANSIVITY OF SILICON FROM 0-K TO 1000-K

[11] PRECISE MEASUREMENT OF THERMAL-EXPANSION OF SILICON NEAR 40DEGREESC [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1683 - 1685

[12] ROBERTS R, COMMUNICATION

[13] Roberts R. B., 1981, Journal of Physics E (Scientific Instruments), V14, P1386, DOI 10.1088/0022-3735/14/12/009

[14] THERMAL-EXPANSION REFERENCE DATA - SILICON 300-850-K [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (10) : L163 - L166

[15] THERMAL-EXPANSION REFERENCE DATA - SILICON 80-280 K [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (09) : L119 - L120

[16] ROBERTS RB, 1978, THERMAL EXPANSION, V6, P187

[17] LOW-TEMPERATURE THERMAL-EXPANSION AND GRUNEISEN PARAMETERS OF SOME TETRAHEDRALLY BONDED SOLIDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (13): : 2031 - 2042

[18] White G. K., 1979, High Temperatures - High Pressures, V11, P471

[19] White G. K., 1974, AIP C P, V17, P1, DOI 10.1063/1.2945923

[20] ZHDANOVA VV, 1967, INORG MATER, V3, P112

[11] PRECISE MEASUREMENT OF THERMAL-EXPANSION OF SILICON NEAR 40DEGREESC [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1683 - 1685

[12] ROBERTS R, COMMUNICATION

[13] Roberts R. B., 1981, Journal of Physics E (Scientific Instruments), V14, P1386, DOI 10.1088/0022-3735/14/12/009

[14] THERMAL-EXPANSION REFERENCE DATA - SILICON 300-850-K [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (10) : L163 - L166

[15] THERMAL-EXPANSION REFERENCE DATA - SILICON 80-280 K [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (09) : L119 - L120

[16] ROBERTS RB, 1978, THERMAL EXPANSION, V6, P187

[17] LOW-TEMPERATURE THERMAL-EXPANSION AND GRUNEISEN PARAMETERS OF SOME TETRAHEDRALLY BONDED SOLIDS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (13): : 2031 - 2042

[18] White G. K., 1979, High Temperatures - High Pressures, V11, P471

[19] White G. K., 1974, AIP C P, V17, P1, DOI 10.1063/1.2945923

[20] ZHDANOVA VV, 1967, INORG MATER, V3, P112