CHARACTERISTICS OF PHOTOCONDUCTIVITY OF TELLURIUM-DOPED CADMIUM ANTIMONIDE

被引：0

作者：

GUSEV, SM ^{[1
]}

GRECHKO, VA ^{[1
]}

GAVRILENKO, NV ^{[1
]}

机构：

[1] CHERNOVTSY STATE UNIV, CHERNOVTSY, UKRAINE

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：705 / 706

页数：2

共 50 条

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