CHARACTERISTICS OF PHOTOCONDUCTIVITY OF TELLURIUM-DOPED CADMIUM ANTIMONIDE

被引：0
|
作者：
GUSEV, SM [1 ]
GRECHKO, VA [1 ]
GAVRILENKO, NV [1 ]
机构：
[1] CHERNOVTSY STATE UNIV, CHERNOVTSY, UKRAINE
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 06期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：705 / 706
页数：2
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