CHARACTERISTICS OF PHOTOCONDUCTIVITY OF TELLURIUM-DOPED CADMIUM ANTIMONIDE

被引：0

作者：

GUSEV, SM ^{[1
]}

GRECHKO, VA ^{[1
]}

GAVRILENKO, NV ^{[1
]}

机构：

[1] CHERNOVTSY STATE UNIV, CHERNOVTSY, UKRAINE

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：705 / 706

页数：2

共 50 条

[1] NEGATIVE MAGNETORESISTANCE OF TELLURIUM-DOPED GALLIUM ANTIMONIDE
BRANDT, NB
DEMISHEV, SV
DMITRIEV, AA
MOSHCHALKOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 461 - 462
[2] SINGULARITY OF THE PHOTOCONDUCTIVITY SPECTRUM OF TELLURIUM-DOPED GERMANIUM
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USHAKOV, AY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1192 - 1192
[3] LUMINESCENCE IN TELLURIUM-DOPED CADMIUM SULFIDE
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JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4589 - &
[4] ELECTROLUMINESCENCE IN TELLURIUM-DOPED CADMIUM SULPHIDE
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[5] INFLUENCE OF PRESSURE ON THE KONDO EFFECT IN TELLURIUM-DOPED GALLIUM ANTIMONIDE
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DEMISHEV, SV
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CHUDINOV, SM
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[6] INDIRECT GAP LUMINESCENCE FROM TELLURIUM-DOPED GALLIUM ANTIMONIDE
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[7] NEGATIVE SHIFT OF THE IMPURITY PHOTOCONDUCTIVITY EDGE OF TELLURIUM-DOPED GERMANIUM
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[8] The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors
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Pelczynski, M
Cooke, P
Green, L
Heremans, J
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[9] BEHAVIOR OF TELLURIUM-DOPED GALLIUM ANTIMONIDE CRYSTALS UNDER HYDROSTATIC-PRESSURE
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ERMAKOVA, NG
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[10] Influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors
GM Research and Development Cent, Warren, United States
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