GUIDELINES FOR CONSTRUCTION OF LOW-PRESSURE GAS MANIFOLDS

[1] EFFECTS OF GEOMETRY ON DIFFUSION-CONTROLLED CHEMICAL-REACTION RATES IN A PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : 437 - 441

[2] BERSIN RL, 1978, SOLID STATE TECHNOL, V21, P117

[3] ETCHING UNIFORMITIES OF SILICON IN CF4 + 4-PERCENT O2 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2235 - 2239

[4] A METHOD FOR INCREASING THE ETCH-RATE RATIO OF OXIDES TO NON-OXIDES IN INERT-GAS ION MILLING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3362 - 3364

[5] Hadley G., 1961, LINEAR ALGEBRA

[6] VELOCITY DISTRIBUTION MEASUREMENTS FOR NEAR-FREE MOLECULE FLOW THROUGH AN ORIFICE [J]. PHYSICS OF FLUIDS, 1970, 13 (02) : 528 - &

[7] FLOW AND SELF-DIFFUSION OF GASES IN CAPILLARIES .I. [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2489 - &

[8] MADDOX RL, 1978, SOLID STATE TECHNOL, V21, P107

[9] Maissel L.I., 1970, HDB THIN FILM TECHNO, P1

[10] MATTSON B, 1980, SOLID STATE TECHNOL, V23, P61

[1] EFFECTS OF GEOMETRY ON DIFFUSION-CONTROLLED CHEMICAL-REACTION RATES IN A PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : 437 - 441

[2] BERSIN RL, 1978, SOLID STATE TECHNOL, V21, P117

[3] ETCHING UNIFORMITIES OF SILICON IN CF4 + 4-PERCENT O2 PLASMA [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2235 - 2239

[4] A METHOD FOR INCREASING THE ETCH-RATE RATIO OF OXIDES TO NON-OXIDES IN INERT-GAS ION MILLING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3362 - 3364

[5] Hadley G., 1961, LINEAR ALGEBRA

[6] VELOCITY DISTRIBUTION MEASUREMENTS FOR NEAR-FREE MOLECULE FLOW THROUGH AN ORIFICE [J]. PHYSICS OF FLUIDS, 1970, 13 (02) : 528 - &

[7] FLOW AND SELF-DIFFUSION OF GASES IN CAPILLARIES .I. [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) : 2489 - &

[8] MADDOX RL, 1978, SOLID STATE TECHNOL, V21, P107

[9] Maissel L.I., 1970, HDB THIN FILM TECHNO, P1

[10] MATTSON B, 1980, SOLID STATE TECHNOL, V23, P61