DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2

被引：99

作者：

NISHIOKA, Y ^{[1
]}

DASILVA, EF ^{[1
]}

WANG, Y ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：38 / 40

页数：3

相关论文

共 10 条

[1] DASILVA EF, 1987, IEEE T NUCL SCI, V34
[2] FICHETTI ML, 1985, J APPL PHYS, V54, P2854
[3] RADIATION-INDUCED DEFECTS IN SIO2 AS DETERMINED WITH XPS
GRUNTHANER, FJ
GRUNTHANER, PJ
MASERJIAN, J
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 1462 - 1466
[4] HOT-ELECTRON INDUCED INTERFACE TRAPS IN METAL/SIO2/SI CAPACITORS - THE EFFECT OF GATE-INDUCED STRAIN
HOOK, TB
MA, TP
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1208 - 1210
[5] INTERFACE TRAP GENERATION IN SILICON DIOXIDE WHEN ELECTRONS ARE CAPTURED BY TRAPPED HOLES
LAI, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2540 - 2546
[6] TIME-DEPENDENT EVOLUTION OF INTERFACE TRAPS IN HOT-ELECTRON DAMAGED METAL/SIO2/SI CAPACITORS
NISHIOKA, Y
DASILVA, EF
MA, TP
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (12) : 566 - 568
[7] TRAP GENERATION AND OCCUPATION DYNAMICS IN SIO2 UNDER CHARGE INJECTION STRESS
NISSANCOHEN, Y
SHAPPIR, J
FROHMANBENTCHKOWSKY, D
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) : 2024 - 2035
[8] WANG Y, 1985, DEC IEEE SISC FT LAU
[9] SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS
WEINBERGER, BR
PETERSON, GG
ESCHRICH, TC
KRASINSKI, HA
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3232 - 3234
[10] DEPENDENCE OF X-RAY GENERATION OF INTERFACE TRAPS ON GATE METAL INDUCED INTERFACIAL STRESS IN MOS STRUCTURES
ZEKERIYA, V
MA, TP
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1261 - 1266