DRAMATIC IMPROVEMENT OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS STRUCTURES CONTAINING F OR CL IN SIO2

被引：100

作者：

NISHIOKA, Y ^{[1
]}

DASILVA, EF ^{[1
]}

WANG, Y ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 01期

关键词：

D O I：

10.1109/55.20406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / 40

页数：3

共 10 条

[1]

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[8]

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[9] SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS [J].

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[10] DEPENDENCE OF X-RAY GENERATION OF INTERFACE TRAPS ON GATE METAL INDUCED INTERFACIAL STRESS IN MOS STRUCTURES [J].

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