SCHOTTKY CONTACTS ON N-INP WITH HIGH BARRIER HEIGHTS AND REDUCED FERMI-LEVEL PINNING BY A NOVEL IN-SITU ELECTROCHEMICAL PROCESS

Schottky contacts on n-InP were fabricated by a, novel in situ electrochemical process. The characteristics: of the Schottky contacts were investigated using atomic force microscopy (AFM). X-ray photoemission spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) techniques. The results of AFM and XPS measurements indicate that the novel in situ electrochemical process produces smooth and oxide-free interfaces. The Schottky contacts show nearly ideal thermionic emission characteristics. The novel electrochemical process was found to reduce Fermi-level pinning at the Schottky contact interfaces. The Schottky barrier height was found to change over a wide range from 0.35 eV to 0.86 eV, depending on the work function of the contact metals. The Pt/InP contact gave the highest barrier height of 0.86 eV.