EXTREMELY HIGH-POWER 1.48 MU-M GAINASP/INP GRIN-SCH STRAINED MQW LASERS

被引：10
作者：
KASUKAWA, A
NAMEGAYA, T
IWAI, N
YAMANAKA, N
IKEGAMI, Y
TSUKIJI, N
机构：
[1] Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd, Yokohama 220, 2-4-3, Okano, Nishi-ku
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 01期
关键词：
D O I：
10.1109/68.265872
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A record CW output power of 360 mW at 25-degrees-C was achieved by investigating the structure of optical confinement layer in 1.48 mum GRIN-SCH MQW lasers. It is experimentally demonstrated that the use of a wide bandgap and thin SCH layer gives a high differential quantum efficiency without expense of threshold current. Low driving currents, 195 mA for 100 mW, 450 mA for 200 mW and 890 mA for 300 mW, were obtained in the optimized cavity lengths.
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页码：4 / 6
页数：3
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