SCALING ANALYSIS OF CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILMS BY ATOMIC-FORCE MICROSCOPY

被引:11
|
作者
YOSHINOBU, T
IWASAKI, H
机构
[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki
关键词
INTERFACE ROUGHNESS; NONEQUILIBRIUM GROWTH; SCALING; SELF-AFFINE; CHEMICAL VAPOR DEPOSITION; TUNGSTEN; ATOMIC FORCE MICROSCOPY; EXPERIMENT;
D O I
10.1143/JJAP.32.L1562
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the static surface roughness of 500-nm-thick tungsten chemical-vapor-deposited polycrystalline films on length scales between 5 and 5 x 10(4) nm, using atomic force microscopy. The interface width scales as a power of the system size for small system sizes (< 1000 nm) but is constant for large sizes, which is in agreement with nonequilibrium interface growth theory. The scaling exponent (0.75 +/- 0.05) for short-length scales appears to be consistent with the recent prediction based on a conservative volume growth model. In the long-range regime, the rms value becomes larger as the substrate temperature is lowered.
引用
收藏
页码:L1562 / L1564
页数:3
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