EFFECTS OF LOCAL FACET AND LATTICE DAMAGE ON NUCLEATION OF DIAMOND GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：28

作者：

LIN, SJ ^{[1
]}

LEE, SL ^{[1
]}

HWANG, J ^{[1
]}

CHANG, CS ^{[1
]}

WEN, HY ^{[1
]}

机构：

[1] IND TECHNOL RES INST, MAT RES LABS, HSINCHU, TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond deposition on an anisotropic etched Si and ion implanted Si surfaces have been examined here for the first time. Local facets on an anisotropic etched surface shows no nucleation of diamond. Synthetic diamond, in contrast, has been able to nucleate on an As+ or Si+ ion implanted Si substrate without diamond abrasive pretreatment. Selective deposition of diamond occurs only for low dose ion implantation, 100 keV 10(14) cm-2, but not for high dose ion implantation, 100 KeV 10(16) cm-2. Strain is proposed as the main reason for nucleation of diamond on the ion implanted Si substrates.

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页码：1559 / 1561

页数：3

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