DETERMINATION OF THE FOWLER-NORDHEIM TUNNELING BARRIER FROM NITRIDE TO OXIDE IN OXIDE - NITRIDE DUAL DIELECTRIC

被引:18
作者
YAU, LD
机构
关键词
D O I
10.1109/EDL.1986.26402
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:365 / 367
页数:3
相关论文
共 8 条
[1]  
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[2]   CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].
FROHMANB.D ;
LENZLINGER, M .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+
[3]   CHARACTERIZATION OF CURRENT TRANSPORT IN MNOS STRUCTURES WITH COMPLEMENTARY TUNNELING EMITTER BIPOLAR-TRANSISTORS [J].
SCHRODER, DK ;
WHITE, MH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :899-906
[4]  
SZE WI, 1985, P PORTLAND INT C SIL, P43
[5]  
WATANABE T, COMMUNICATION
[6]  
WATANABE T, 1984 IEDM
[7]   DETERMINATION OF SIGN OF CARRIER TRANSPORTED ACROSS SIO2-FILMS ON SI [J].
WEINBERG, ZA ;
JOHNSON, WC ;
LAMPERT, MA .
APPLIED PHYSICS LETTERS, 1974, 25 (01) :42-43
[8]   ARGUMENTS FOR ELECTRON CONDUCTION IN SILICON-NITRIDE [J].
YAU, LD .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :318-321