SUBMICROMETER THIN GATE OXIDE P-CHANNEL TRANSISTORS WITH P+ POLYSILICON GATES FOR VLSI APPLICATIONS

被引：9
作者：
CHAM, KM
WENOCUR, DW
LIN, J
LAU, CK
FU, HS
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期
关键词：
D O I：
10.1109/EDL.1986.26288
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：49 / 52
页数：4
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