GALVANOMAGNETIC LUMINESCENCE OF INDIUM-ANTIMONIDE

[1] RADIANT REFRIGERATION BY SEMICONDUCTOR DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1369 - 1374

[2] Bolgov S. S., 1979, Soviet Technical Physics Letters, V5, P610

[3] BOLGOV SS, 1983, SOV PHYS SEMICOND+, V17, P134

[4] MAGNETIC OPTICAL BAND GAP EFFECT IN INSB [J]. PHYSICAL REVIEW, 1956, 103 (03): : 826 - 828

[5] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3258 - 3267

[6] EFFECTS OF DIFFUSION CURRENT ON GALVANOMAGNETIC PROPERTIES IN THIN INTRINSIC INSB AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3530 - 3540

[7] GELMONT BL, 1979, SOV PHYS JETP, V48, P268

[8] DEPENDENCE OF PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS ON SLAB THICKNESS IN INSB AT ROOM-TEMPERATURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 445 - 452

[9] Ivanov-Omskii V. I., 1965, SOV PHYS DOKL, V10, P345

[10] IVANOVOMSKII VI, 1966, SOV PHYS JETP LETT, V3, P185

[1] RADIANT REFRIGERATION BY SEMICONDUCTOR DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1369 - 1374

[2] Bolgov S. S., 1979, Soviet Technical Physics Letters, V5, P610

[3] BOLGOV SS, 1983, SOV PHYS SEMICOND+, V17, P134

[4] MAGNETIC OPTICAL BAND GAP EFFECT IN INSB [J]. PHYSICAL REVIEW, 1956, 103 (03): : 826 - 828

[5] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3258 - 3267

[6] EFFECTS OF DIFFUSION CURRENT ON GALVANOMAGNETIC PROPERTIES IN THIN INTRINSIC INSB AT ROOM-TEMPERATURE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3530 - 3540

[7] GELMONT BL, 1979, SOV PHYS JETP, V48, P268

[8] DEPENDENCE OF PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS ON SLAB THICKNESS IN INSB AT ROOM-TEMPERATURE [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 36 (02): : 445 - 452

[9] Ivanov-Omskii V. I., 1965, SOV PHYS DOKL, V10, P345

[10] IVANOVOMSKII VI, 1966, SOV PHYS JETP LETT, V3, P185