LOW-RESISTANCE OHMIC CONTACTS TO PARA-TYPE GAAS USING ZN/PD/AU METALLIZATION

被引：22

作者：

BROOKS, RC ^{[1
]}

CHEN, CL ^{[1
]}

CHU, A ^{[1
]}

MAHONEY, LJ ^{[1
]}

MAVROIDES, JG ^{[1
]}

MANFRA, MJ ^{[1
]}

FINN, MC ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：525 / 527

页数：3

共 6 条

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[2] PD-GE CONTACTS TO N-TYPE GAAS [J].

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ROBINSON, GY .

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[3] AU-MG IMPROVED OHMIC CONTACTS TO P-GAAS [J].

PAPANICOLAOU, NA ;

CHRISTOU, A .

ELECTRONICS LETTERS, 1983, 19 (11) :418-420

[4]

Sharma B.L., 1981, Semiconductors and Semimetals, P1

[5] SINTERED OHMIC CONTACTS TO N-TYPE AND P-TYPE GAAS [J].

SINHA, AK ;

SMITH, TE ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :218-224

[6] LOW CONTACT RESISTANCE NON-ALLOYED OHMIC CONTACTS TO ZN-IMPLANTED P+ GAAS [J].

SU, CY ;

STOLTE, C .

ELECTRONICS LETTERS, 1983, 19 (21) :891-892

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