LOW-RESISTANCE OHMIC CONTACTS TO PARA-TYPE GAAS USING ZN/PD/AU METALLIZATION

被引：22

作者：

BROOKS, RC ^{[1
]}

CHEN, CL ^{[1
]}

CHU, A ^{[1
]}

MAHONEY, LJ ^{[1
]}

MAVROIDES, JG ^{[1
]}

MANFRA, MJ ^{[1
]}

FINN, MC ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期

关键词：

D O I：

10.1109/EDL.1985.26217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：525 / 527

页数：3

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