RESIDUAL DEFECTS IN IMPLANTED SILICON AFTER ANNEALING WITH INCOHERENT-LIGHT

被引：1

作者：

BAITHER, D ^{[1
]}

KOEGLER, R ^{[1
]}

PANKNIN, D ^{[1
]}

WIESER, E ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期

关键词：

D O I：

10.1002/pssa.2210940242

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：767 / 772

页数：6

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