RESIDUAL DEFECTS IN IMPLANTED SILICON AFTER ANNEALING WITH INCOHERENT-LIGHT

被引：1
|
作者：
BAITHER, D [1 ]
KOEGLER, R [1 ]
PANKNIN, D [1 ]
WIESER, E [1 ]
机构：
[1] AKAD WISSENSCH DDR,ZENT INST KERNFORSCH,ROSSENDORF,GER DEM REP
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 02期
关键词：
D O I：
10.1002/pssa.2210940242
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：767 / 772
页数：6
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