TEM STUDIES OF HIGH-DOSE OXYGEN IMPLANTED SILICON ANNEALED AT 1405-DEGREES-C

被引：0
作者：
MARSH, CD
HUTCHISON, JL
BOOKER, GR
REESON, KJ
HEMMENT, PLF
CELLER, GK
机构：
[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
[2] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：409 / 414
页数：6
相关论文
共 50 条
  • [21] EFFECT OF ANNEALING AMBIENT ON THE REMOVAL OF OXIDE PRECIPITATES IN HIGH-DOSE OXYGEN IMPLANTED SILICON
    SERAPHIN, S
    KRAUSE, SJ
    ROITMAN, P
    SIMONS, DS
    CORDTS, BF
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (23) : 3003 - 3005
  • [22] EVIDENCE OF ARSENIC-INDUCED SURFACE-DEFECTS IN HIGH-DOSE AS+-IMPLANTED RAPIDLY ANNEALED SILICON
    KUMAR, SN
    CHAUSSEMY, G
    CANUT, B
    LAUGIER, A
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (22) : 2167 - 2169
  • [23] HIGH-TEMPERATURE PRECIPITATE FORMATION IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
    KRAUSE, SJ
    JUNG, CO
    BURNHAM, ME
    WILSON, SR
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 391 - 398
  • [24] STRUCTURE OF TWINNED (113) DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
    VISITSERNGTRAKUL, S
    KRAUSE, SJ
    BARRY, JC
    [J]. JOURNAL OF MATERIALS RESEARCH, 1991, 6 (04) : 792 - 795
  • [25] OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-DOSE ION-IMPLANTED, LASER-ANNEALED SILICON SOLAR-CELLS
    OSTOJA, P
    SOLMI, S
    ZANI, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6208 - 6213
  • [26] Amorphization and crystallization in high-dose Zn+-implanted silicon
    Kalitzova, M
    Simov, S
    Yankov, RA
    Angelov, C
    Vitali, G
    Rossi, M
    Pizzuto, C
    Zollo, G
    Faure, J
    Killian, L
    Bonhomme, P
    Voelskow, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (03) : 1143 - 1149
  • [27] STRUCTURAL PECULIARITIES IN HIGH-DOSE AR+ IMPLANTED SILICON
    SIMOV, S
    KALITZOVA, M
    DANESH, P
    PASHOV, N
    BONHOMME, P
    BALOSSIER, G
    DJAKOV, A
    [J]. VACUUM, 1985, 35 (12) : 527 - 529
  • [28] KINETICS OF ARSENIC ACTIVATION AND CLUSTERING IN HIGH-DOSE IMPLANTED SILICON
    KAMGAR, A
    BAIOCCHI, FA
    SHENG, TT
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1090 - 1092
  • [29] High-dose phenomena in zinc-implanted silicon crystals
    Simov, S
    Kalitzova, M
    Karpuzov, D
    Yankov, R
    Angelov, C
    Faure, J
    Bonhomme, P
    Balossier, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (07) : 3470 - 3476
  • [30] Boron diffusion in high-dose germanium-implanted silicon
    Kwok, KH
    Selvakumar, CR
    [J]. UNIVERSITY AND INDUSTRY - PARTNERS IN SUCCESS, CONFERENCE PROCEEDINGS VOLS 1-2, 1998, : 878 - 881
12345