TEM STUDIES OF HIGH-DOSE OXYGEN IMPLANTED SILICON ANNEALED AT 1405-DEGREES-C

被引：0
|
作者：
MARSH, CD
HUTCHISON, JL
BOOKER, GR
REESON, KJ
HEMMENT, PLF
CELLER, GK
机构：
[1] UNIV SURREY, DEPT ELECTR & ELECT ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND
[2] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1987年 / 87期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：409 / 414
页数：6
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