BAMBI - A DESIGN-MODEL FOR POWER MOSFETS

[1] THE DYNAMICS OF THE THYRISTOR TURN-ON PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 483 - 494

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] BOARD K, 1984, IEEE T ELECTRON DEV, V31, P75, DOI 10.1109/T-ED.1984.21476

[4] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[5] COE DJ, 1984, SIMULATION SEMICONDU, P121

[6] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[7] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[8] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[9] FINITE BOXES - A GENERALIZATION OF THE FINITE-DIFFERENCE METHOD SUITABLE FOR SEMICONDUCTOR-DEVICE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1070 - 1082

[10] FRANZ AF, 1984, THESIS TU WIEN

[1] THE DYNAMICS OF THE THYRISTOR TURN-ON PROCESS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (02) : 483 - 494

[2] ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 292 - 295

[3] BOARD K, 1984, IEEE T ELECTRON DEV, V31, P75, DOI 10.1109/T-ED.1984.21476

[4] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[5] COE DJ, 1984, SIMULATION SEMICONDU, P121

[6] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[7] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[8] FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[9] FINITE BOXES - A GENERALIZATION OF THE FINITE-DIFFERENCE METHOD SUITABLE FOR SEMICONDUCTOR-DEVICE SIMULATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (09) : 1070 - 1082

[10] FRANZ AF, 1984, THESIS TU WIEN