DEPOSITION OF A SI MONOLAYER ON SAPPHIRE USING AN ARF EXCIMER LASER FOR SI EPITAXIAL-GROWTH

被引：6

作者：

ISHIDA, M ^{[1
]}

TANAKA, H ^{[1
]}

SAWADA, K ^{[1
]}

NAMIKI, A ^{[1
]}

NAKAMURA, T ^{[1
]}

OHTAKE, N ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2087 / 2091

页数：5

共 10 条

[1] SI-SIO2 INTERFACE STRUCTURES ON SI(100), (111), AND (110) SURFACES [J].

HATTORI, T ;

SUZUKI, T .

APPLIED PHYSICS LETTERS, 1983, 43 (05) :470-472

[2] GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS [J].

ISHIDA, M ;

YASUDA, Y ;

OHYAMA, H ;

WAKAMATSU, H ;

ABE, H ;

NAKAMURA, T .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4073-4078

[3] EPITAXIAL-GROWTH OF SOS FILMS WITH AMORPHOUS SI BUFFER LAYER [J].

ISHIDA, M ;

OHYAMA, H ;

SASAKI, S ;

YASUDA, Y ;

NISHINAGA, T ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L541-L544

[4] CHARACTERIZATION OF SOS FILMS GROWN WITH AMORPHOUS SI BUFFER LAYERS BY MOS FETS [J].

ISHIDA, M ;

YASUDA, Y ;

WAKAMATSU, H ;

ABE, H ;

NISHINAGA, T ;

NAKAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L438-L440

[5] AES ANALYSIS OF THE GROWTH-MECHANISM OF METAL LAYERS ON METAL-SURFACES [J].

OSSICINI, S ;

MEMEO, R ;

CICCACCI, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :387-391

[6]

Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103

[7] ION-BOMBARDMENT INDUCED CHANGES IN SILICON DIOXIDE SURFACE-COMPOSITION STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

THOMAS, JH ;

HOFMANN, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (05) :1921-1928

[8] INTENSITY ANALYSIS OF XPS SPECTRA TO DETERMINE OXIDE UNIFORMITY - APPLICATION TO SIO2-SI INTERFACES [J].

VASQUEZ, RP ;

GRUNTHANER, FJ .

SURFACE SCIENCE, 1980, 99 (03) :681-688

[9] UV OZONE CLEANING OF SURFACES [J].

VIG, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :1027-1034

[10] AUGER AND PHOTOELECTRON LINE ENERGY RELATIONSHIPS IN ALUMINUM-OXYGEN AND SILICON-OXYGEN COMPOUNDS [J].

WAGNER, CD ;

PASSOJA, DE ;

HILLERY, HF ;

KINISKY, TG ;

SIX, HA ;

JANSEN, WT ;

TAYLOR, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (04) :933-944

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