DEPOSITION OF A SI MONOLAYER ON SAPPHIRE USING AN ARF EXCIMER LASER FOR SI EPITAXIAL-GROWTH

被引：6
作者：
ISHIDA, M [1 ]
TANAKA, H [1 ]
SAWADA, K [1 ]
NAMIKI, A [1 ]
NAKAMURA, T [1 ]
OHTAKE, N [1 ]
机构：
[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期
关键词：
D O I：
10.1063/1.341717
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2087 / 2091
页数：5
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