RESISTS FOR ELECTRON-BEAM LITHOGRAPHY

被引:0
作者
TAMAMURA, T
IMAMURA, S
SUGAWARA, S
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来源
ACS SYMPOSIUM SERIES | 1984年 / 242卷
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O6 [化学];
学科分类号
0703 ;
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页码:103 / 118
页数:16
相关论文
共 48 条
[1]  
Asakawa H., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P88
[2]   GEL FORMATION IN NEGATIVE ELECTRON RESISTS [J].
ATODA, N ;
KAWAKATSU, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (10) :1519-1524
[3]   A SENSITIVE NOVOLAC-BASED POSITIVE ELECTRON RESIST [J].
BOWDEN, MJ ;
THOMPSON, LF ;
FAHRENHOLTZ, SR ;
DOERRIES, EM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1304-1313
[4]  
BOWDEN MJ, 1975, J VAC SCI TECHNOL, V12, P72
[5]  
BOWDEN MJ, 1981, SOLID STATE TECH JUN, P73
[7]   THE CROSS-LINKING AND DEGRADATION OF PARAFFIN CHAINS BY HIGH-ENERGY RADIATION [J].
CHARLESBY, A .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1954, 222 (1148) :60-74
[8]   PROSPECTS FOR HIGH-BRIGHTNESS X-RAY SOURCES FOR LITHOGRAPHY [J].
ECONOMOU, NP ;
FLANDERS, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :868-871
[9]  
FEIT ED, 1980, POLYM ENG SCI, V20, P1059
[10]   DRY ETCHING DURABILITY OF POSITIVE ELECTRON RESISTS [J].
HARADA, K .
JOURNAL OF APPLIED POLYMER SCIENCE, 1981, 26 (10) :3395-3408