THE ROLE OF DEFECTS IN THE DIFFUSION AND ACTIVATION OF IMPURITIES IN ION-IMPLANTED SEMICONDUCTORS

被引：22
作者：
FARLEY, CW
STREETMAN, BG
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 02期
关键词：
D O I：
10.1007/BF02656686
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：401 / 436
页数：36
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共 115 条
[1]   IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON [J].
AKUTAGAWA, W ;
DUNLAP, HL ;
HART, R ;
MARSH, OJ .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :777-782
[2]   EFFECT OF DUAL IMPLANTS INTO GAAS [J].
AMBRIDGE, T ;
HECKINGBOTTOM, R ;
BELL, EC ;
SEALY, BJ ;
STEPHENS, KG ;
SURRIDGE, RK .
ELECTRONICS LETTERS, 1975, 11 (15) :314-315
[3]  
AMBRIDGE T, 1973, RADIAT EFF, V17, P31
[4]   APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
ASBECK, PM ;
MILLER, DL ;
BABCOCK, EJ ;
KIRKPATRICK, CG .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :81-84
[5]  
BANERJEE SK, UNPUB IEEE T ELECTRO
[6]  
BARANOVA AS, 1978, MIKROELEKTRONIKA, V7, P47
[7]   REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION [J].
BARUCH, P ;
MONNIER, J ;
BLANCHARD, B ;
CASTAING, C .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :77-80
[8]  
Baruch P., 1977, I PHYS C SER, V31, P126
[9]  
BATTACHARYA RS, 1983, J APPL PHYS, V54, P2329
[10]  
BELIKOVA MN, 1976, SOV PHYS SEMICOND+, V10, P319
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