MOLECULAR-BEAM EPITAXY OF GAP AND GAAS1-XPX

被引：35

作者：

MATSUSHIMA, Y ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO 188,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 11期

关键词：

D O I：

10.1143/JJAP.15.2093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2093 / 2101

页数：9

共 11 条

[1] GAAS, GAP, AND GAASXP1-X EPITAXIAL FILMS GROWN BY MOLECULAR BEAM DEPOSITION [J].

ARTHUR, JR ;

LEPORE, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :545-&

[2]

CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[3]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE ON CLEAVED AND POLISHED (111) CALCIUM FLUORIDE [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) :782-&

[5] EPITAXIAL GROWTH AND OPTICAL EVALUATION OF GALLIUM PHOSPHIDE AND GALLIUM ARSENIDE THIN FILMS ON CALCIUM FLUORIDE SUBSTRATE [J].

CHO, AY ;

CHEN, YS .

SOLID STATE COMMUNICATIONS, 1970, 8 (06) :377-&

[6] APPLICATION OF ION MICROPROBE ANALYZER TO MEASUREMENT OF DISTRIBUTION OF BORON IONS IMPLANTED INTO SILICON CRYSTALS [J].

GITTINS, RP ;

DEARNALEY, G ;

MORGAN, DV .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (09) :1654-+

[7]

GONDA S, 1976, J APPL PHYS, V47, P4198, DOI 10.1063/1.323288

[8] CHARACTERIZATION AND SUBSTRATE TEMPERATURE DEPENDENCE OF CRYSTALLINE STATE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

GONDA, S ;

MATSUSHIMA, Y ;

MAKITA, Y ;

MUKAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (07) :935-942

[9]

MARCUS PB, 1969, PHYSICAL MEASUREMENT, P110

[10] GRADED-BANDGAP 3-5 TERNARY COMPOUND FILMS BY MOLECULAR-BEAM EPITAXY [J].

TATEISHI, K ;

NAGANUMA, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (05) :785-789

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