ELECTRON TRAP STATES AND LOW-FREQUENCY NOISE IN TUNNEL-JUNCTIONS

被引：27

作者：

ROGERS, CT ^{[1
]}

BUHRMAN, RA ^{[1
]}

GALLAGHER, WJ ^{[1
]}

RAIDER, SI ^{[1
]}

KLEINSASSER, AW ^{[1
]}

SANDSTROM, RL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 02期

关键词：

D O I：

10.1109/TMAG.1987.1064840

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1658 / 1661

页数：4

共 15 条

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[9] ION-IMPLANTATION INTO NB/NB OXIDE/PBAUIN JOSEPHSON TUNNEL-JUNCTIONS [J].

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[10] NATURE OF SINGLE-LOCALIZED-ELECTRON STATES DERIVED FROM TUNNELING MEASUREMENTS [J].

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