SEMICONDUCTOR NONVOLATILE ELECTRON-BEAM ACCESSED MASS MEMORY

被引：13

作者：

HUGHES, WC ^{[1
]}

LEMMOND, CQ ^{[1
]}

PARKS, HG ^{[1
]}

ELLIS, GW ^{[1
]}

POSSIN, GE ^{[1
]}

WILSON, RH ^{[1
]}

机构：

[1] GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 08期

关键词：

D O I：

10.1109/PROC.1975.9915

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1230 / 1240

页数：11

相关论文

共 23 条

[1] Bringham E.O., 1967, IEEE SPECTRUM, V4, P63
[2] DIODE DETECTION OF INFORMATION STORED IN ELECTRON-BEAM ADDRESSED MOS STRUCTURE
ELLIS, GW
POSSIN, GE
WILSON, RH
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (09) : 419 - 421
[3] ELECTRON BEAM DETECTION OF CHARGE STORAGE IN MOS CAPACITORS
HUBER, EE
COHEN, MS
SMITH, DO
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (04) : 147 - &
[4] HUGHES WC, 1967, 10TH REC S EL ION LA
[5] HUGHES WE, TO BE PUBLISHED
[6] ELECTRON BEAM DEFLECTION .1. SMALL-ANGLE DEFLECTION THEORY
HUTTER, RGE
[J]. JOURNAL OF APPLIED PHYSICS, 1947, 18 (08) : 740 - 758
[7] KLEMPERER O, 1971, ELECTRON OPTICS, pCH2
[8] ELECTRON FLYS EYE LENS ARTWORK CAMERA
LEMMOND, CQ
BUSCHMAN.EC
KLOTZ, TH
WHITE, GM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (09) : 598 - 603
[9] IMPROVED IMPREGNATED CATHODE
LEVI, R
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (05) : 639 - 639
[10] LIEBMANN G, 1949, P PHYS SOC B, V62, P50