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MG+ IMPLANTATION INTO ALXGA1-XAS
被引:6
作者
:
ASHIGAKI, S
论文数:
0
引用数:
0
h-index:
0
ASHIGAKI, S
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
MAKITA, Y
KANAYAMA, T
论文数:
0
引用数:
0
h-index:
0
KANAYAMA, T
TSURUSHIMA, T
论文数:
0
引用数:
0
h-index:
0
TSURUSHIMA, T
机构
:
来源
:
JOURNAL OF APPLIED PHYSICS
|
1982年
/ 53卷
/ 05期
关键词
:
D O I
:
10.1063/1.331092
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3892 / 3893
页数:2
相关论文
共 17 条
[1]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[2]
ASHIGAKI S, UNPUB
[3]
BE-IMPLANTED (GAAL)AS STRIPE GEOMETRY LASERS
BARCHAIM, N
论文数:
0
引用数:
0
h-index:
0
BARCHAIM, N
LANIR, M
论文数:
0
引用数:
0
h-index:
0
LANIR, M
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
URY, I
论文数:
0
引用数:
0
h-index:
0
URY, I
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
YUST, M
论文数:
0
引用数:
0
h-index:
0
YUST, M
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 233
-
235
[4]
DETERMINATION OF IONIZATION ENERGY OF MAGNESIUM IN GALLIUM ARSENIDE
BENNETT, RJ
论文数:
0
引用数:
0
h-index:
0
BENNETT, RJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1962,
23
(11)
: 1679
-
&
[5]
IMPLANTATION OF SELENIUM INTO GA1-XALXAS
FAVENNEC, PN
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
FAVENNEC, PN
HENRY, L
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
HENRY, L
JANICKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
JANICKI, T
[J].
ELECTRONICS LETTERS,
1977,
13
(12)
: 338
-
339
[6]
MG AND BE ION IMPLANTED GAAS
HUNSPERGER, RG
论文数:
0
引用数:
0
h-index:
0
HUNSPERGER, RG
JAMBA, DM
论文数:
0
引用数:
0
h-index:
0
JAMBA, DM
WILSON, RG
论文数:
0
引用数:
0
h-index:
0
WILSON, RG
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(03)
: 1318
-
+
[7]
CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
IMMORLICA, AA
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
EISEN, FH
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(02)
: 94
-
95
[8]
EFFECT OF ARSENIC PARTIAL-PRESSURE ON CAPLESS ANNEAL OF ION-IMPLANTED GAAS
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
KASAHARA, J
ARAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
ARAI, M
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
WATANABE, N
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1997
-
2001
[9]
Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153
[10]
PHOTOLUMINESCENCE EXCITATION-SPECTRA OF NITROGEN-IMPLANTED ALXGA1-XAS
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
MAKITA, Y
GONDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
GONDA, S
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(04)
: 1628
-
1630
←
1
2
→
共 17 条
[1]
INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
ASHEN, DJ
DEAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
DEAN, PJ
HURLE, DTJ
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
HURLE, DTJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
MULLIN, JB
WHITE, AM
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,MALVERN,WORCESTERSHIRE,ENGLAND
WHITE, AM
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1975,
36
(10)
: 1041
-
1053
[2]
ASHIGAKI S, UNPUB
[3]
BE-IMPLANTED (GAAL)AS STRIPE GEOMETRY LASERS
BARCHAIM, N
论文数:
0
引用数:
0
h-index:
0
BARCHAIM, N
LANIR, M
论文数:
0
引用数:
0
h-index:
0
LANIR, M
MARGALIT, S
论文数:
0
引用数:
0
h-index:
0
MARGALIT, S
URY, I
论文数:
0
引用数:
0
h-index:
0
URY, I
WILT, D
论文数:
0
引用数:
0
h-index:
0
WILT, D
YUST, M
论文数:
0
引用数:
0
h-index:
0
YUST, M
YARIV, A
论文数:
0
引用数:
0
h-index:
0
YARIV, A
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 233
-
235
[4]
DETERMINATION OF IONIZATION ENERGY OF MAGNESIUM IN GALLIUM ARSENIDE
BENNETT, RJ
论文数:
0
引用数:
0
h-index:
0
BENNETT, RJ
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1962,
23
(11)
: 1679
-
&
[5]
IMPLANTATION OF SELENIUM INTO GA1-XALXAS
FAVENNEC, PN
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
FAVENNEC, PN
HENRY, L
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
HENRY, L
JANICKI, T
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
CTR NATL ETUD TELECOMMUN,DEPT PMT,F-22301 LANNION,FRANCE
JANICKI, T
[J].
ELECTRONICS LETTERS,
1977,
13
(12)
: 338
-
339
[6]
MG AND BE ION IMPLANTED GAAS
HUNSPERGER, RG
论文数:
0
引用数:
0
h-index:
0
HUNSPERGER, RG
JAMBA, DM
论文数:
0
引用数:
0
h-index:
0
JAMBA, DM
WILSON, RG
论文数:
0
引用数:
0
h-index:
0
WILSON, RG
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(03)
: 1318
-
+
[7]
CAPLESS ANNEALING OF ION-IMPLANTED GAAS
IMMORLICA, AA
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
IMMORLICA, AA
EISEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
ROCKWELL INT,CTR SCI,THOUSAND OAKS,CA 91360
EISEN, FH
[J].
APPLIED PHYSICS LETTERS,
1976,
29
(02)
: 94
-
95
[8]
EFFECT OF ARSENIC PARTIAL-PRESSURE ON CAPLESS ANNEAL OF ION-IMPLANTED GAAS
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
KASAHARA, J
ARAI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
ARAI, M
WATANABE, N
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 174, Fujitsuka-cho
WATANABE, N
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1997
-
2001
[9]
Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153
[10]
PHOTOLUMINESCENCE EXCITATION-SPECTRA OF NITROGEN-IMPLANTED ALXGA1-XAS
MAKITA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
MAKITA, Y
GONDA, S
论文数:
0
引用数:
0
h-index:
0
机构:
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
GONDA, S
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(04)
: 1628
-
1630
←
1
2
→