MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS

被引：10
作者：
HIYAMIZU, S
MIMURA, T
ISHIKAWA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.7567/JJAPS.21S1.161
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：161 / 168
页数：8
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