AUTOMATIC C-V PLOTTER

被引：9

作者：

FORWARD, KE ^{[1
]}

HASEGAWA, H ^{[1
]}

HARTNAGEL, HL ^{[1
]}

机构：

[1] MERZ LABS, DEPT ELECT & ELECTR ENGN, NEWCASTLE UPON TYNE NE1 7RU, ENGLAND

来源：

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1975年 / 8卷 / 06期

关键词：

D O I：

10.1088/0022-3735/8/6/017

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：487 / 489

页数：3

共 9 条

[1] CURRENT UNDERSTANDING OF CHARGES IN THERMALLY OXIDIZED SILICON STRUCTURE [J].

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :C198-C205

[2] CONTRIBUTIONS OF OXYGEN, SILICON, AND HYDROGEN TO INTERFACE STATES OF AN SI-SIO2 INTERFACE [J].

FAHRNER, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (06) :784-787

[3] CHARACTERISTICS AND POTENTIAL APPLICATIONS OF GAAS1-XPX MIS STRUCTURES [J].

FORBES, L ;

YEARGAN, JR ;

KEUNE, DL ;

CRAFORD, MG .

SOLID-STATE ELECTRONICS, 1974, 17 (01) :25-29

[4] ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE-GALLIUM ARSENIDE INTERFACE [J].

FOSTER, JE ;

SWARTZ, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (11) :1410-+

[5] A PRECISE 4-QUADRANT MULTIPLIER WITH SUBNANOSECOND RESPONSE [J].

GILBERT, B .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (04) :365-&

[6] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

APPLIED PHYSICS LETTERS, 1975, 26 (10) :567-569

[7]

KERN W, 1970, RCA REV, V31, P207

[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[9] SIMPLE MEASUREMENT TECHNIQUE FOR VOLTAGE DEPENDENT CAPACITANCES [J].

TANTRAPORN, W .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4665-+

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