TI-SI-N FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：31
|
作者：
LI, SZ
SHI, YL
PENG, HR
机构：
来源：
PLASMA CHEMISTRY AND PLASMA PROCESSING | 1992年 / 12卷 / 03期
关键词：
TITANIUM NITRIDE; TITANIUM-SILICIUM NITRIDE; PLASMA CVD; HARD COATINGS;
D O I：
暂无
中图分类号：
TQ [化学工业];
学科分类号：
0817 ;
摘要：
Ti-Si-N thin films were deposited on HSS substrates at 560-degrees-C using plasma-enhanced chemical vapor deposition. Feed gases used were TiCl4, SiCl4, N2, and H-2. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases, The Si content in the film varied in the range of 0 to 40 at. %. It was found that a small addition of Si to a TiN film improved the morphology significantly, showing dense and glass like structure. Also a much smoother and more homogeneous interface between the film and the substrate was obtained. The Ti-Si-N films containing 10-15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm2, much higher than that of TiN films.
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页码：287 / 297
页数：11
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