EFFECTS OF SOME ADDITIVES ON THERMOELECTRIC PROPERTIES OF FESI2 THIN-FILMS

被引：74

作者：

KOMABAYASHI, M ^{[1
]}

HIJIKATA, K ^{[1
]}

IDO, S ^{[1
]}

机构：

[1] SAITAMA UNIV,FAC ENGN,DEPT ELECT ENGN,URAWA,SAITAMA 338,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 02期

关键词：

FESI2 THIN FILM; THERMOELECTRIC PROPERTY; RF-SPUTTERING; EFFECTS OF ADDITIVES; ACTIVATION ENERGY;

D O I：

10.1143/JJAP.30.331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi2 thin films were studied. V, Cr or Mn-doped FeSi2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi2.

引用

页码：331 / 334

页数：4

共 8 条

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[7] [No title captured]
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