NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE

被引：25

作者：

KANEKO, H

KOYANAGI, M

SHIMIZU, S

KUBOTA, Y

KISHINO, S

机构：

[1] HITACHI MICRO COMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN

[2] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期

关键词：

D O I：

10.1109/T-ED.1986.22731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1702 / 1709

页数：8

共 17 条

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[8] CONTACT RESISTANCE BEHAVIOR OF TITANIUM NITRIDE [J].

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[9] SPECIFIC CONTACT RESISTIVITY OF TISI2 TO P+ AND N+ JUNCTIONS [J].

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[10] TITANIUM SILICIDATION BY HALOGEN LAMP ANNEALING [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5251-5256

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