ULTRAVIOLET INDUCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS

被引：29

作者：

BALK, P ^{[1
]}

HEINECKE, H ^{[1
]}

PUTZ, N ^{[1
]}

PLASS, C ^{[1
]}

LUTH, H ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,SONDERFORSCH BEREICH 202,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573839

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：711 / 715

页数：5

共 50 条

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[40] Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition [J].

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