MICROWAVE PERFORMANCE OF GAAS PBT FABRICATED FROM MO-CVD WAFERS

被引：2

作者：

TAKANASHI, Y

ASAI, H

ANDO, S

SUGIURA, H

HONDA, T

SUSA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1986年 / 25卷 / 02期

关键词：

D O I：

10.1143/JJAP.25.L111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L111 / L113

页数：3

共 9 条

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[9] COMPARISONS OF GAAS, TUNGSTEN, AND PHOTORESIST ETCH RATES AND GAAS-SURFACES USING RIE WITH CF4, CF4 + N2, AND SF6 + N2 MIXTURES [J].

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