LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES

被引:83
作者
SHIH, HD
JONA, F
JEPSEN, DW
MARCUS, PM
机构
[1] SUNY STONY BROOK,DEPT MAT SCI,STONY BROOK,NY 11794
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.37.1622
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1622 / 1625
页数:4
相关论文
共 44 条
[31]   MEASUREMENT OF ANGLE OF DANGLING-BOND PHOTOEMISSION FROM CLEAVED SILICON [J].
ROWE, JE ;
TRAUM, MM ;
SMITH, NV .
PHYSICAL REVIEW LETTERS, 1974, 33 (22) :1333-1335
[32]   SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].
ROWE, JE ;
IBACH, H .
PHYSICAL REVIEW LETTERS, 1974, 32 (08) :421-424
[33]   COMPARISON OF SILICON LIII,II ELECTRON LOSS SPECTRA AND OPTICAL-ABSORPTION [J].
ROWE, JE ;
CHRISTMAN, SB .
PHYSICS LETTERS A, 1973, A 43 (04) :377-378
[34]   STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J].
SCHLIER, RE ;
FARNSWORTH, HE .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :917-926
[35]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS FOR SI (111) SURFACES - UNRECONSTRUCTED (1X1) AND RECONSTRUCTED (2X1) MODEL STRUCTURES [J].
SCHLUTER, M ;
CHELIKOWSKY, JR ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1975, 12 (10) :4200-4214
[36]   POSSIBLE STRUCTURES FOR CLEAN, ANNEALED SURFACES OF GERMANIUM AND SILICON [J].
SEIWATZ, R .
SURFACE SCIENCE, 1964, 2 :473-483
[37]  
STROZIER JA, 1975, SURFACE PHYSICS MATE, V1
[38]  
TONG SY, 1975, PROGR SURFACE SCI 2, V7
[39]  
VANHOVE MA, 1976, B AM PHYS SOC, V21, P431
[40]   OBSERVATION OF A BAND OF SILICON SURFACE STATES CONTAINING ONE ELECTRON PER SURFACE ATOM [J].
WAGNER, LF ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1972, 28 (21) :1381-&