STUDIES OF CHEMICALLY TREATED GAAS (100) SURFACES BY STM IN AIR

被引：2

作者：

RICHTER, R

HARTNAGEL, HL

机构：

[1] Technische Hochschule Darmstadt, Germany

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1988年 / 65卷 / 04期

关键词：

The authors are grateful to Prof. Pagnia and Dr. N. Sotnik of the Institut fiir Angewandte Physik at this University for the possibility to make investigations with the STM and to Dipl. Phys. S. Braer for his detailed instructions of operating the instrument. We also thank Prof. A. G. Nassibian for discussions about the method of photo-electrochemical treatment and his idea to use it for STM studies. We further thank the Stiftung Volkswagenwerk for financial support;

D O I：

10.1080/00207218808945276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：779 / 787

页数：9

共 13 条

[1] 7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE
BINNIG, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (02) : 120 - 123
[2] SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY
BINNING, G
ROHRER, H
GERBER, C
WEIBEL, E
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (01) : 57 - 61
[3] FEENSTRA R, 1987, PHYS REV LETT, V58, P1668
[4] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
TERSOFF, J
FEIN, AP
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
[5] TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 923 - 929
[6] FEENSTRA RM, 1987, PHYSICAL REV B, V36, P7718
[7] FEENSTRA RM, 1985, PHYSICAL REV B, V32, P1349
[8] VOLTAGE DROP IN THE EXPERIMENTS OF SCANNING TUNNELING MICROSCOPY FOR SI
FLORES, F
GARCIA, N
[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 2289 - 2291
[9] KRETSCHMER KH, 1985, MAR INT REL PHYS S O
[10] SURFACE-TOPOGRAPHY OF ETCHED GAAS-SURFACES
SETHI, BR
HARTNAGEL, HL
JOURDAN, G
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (05) : 561 - 563

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