SILICON DOPING OF MBE-GROWN GAAS FILMS

被引：76
作者：
NEAVE, JH
DOBSON, PJ
HARRIS, JJ
DAWSON, P
JOYCE, BA
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1983年 / 32卷 / 04期
关键词：
D O I：
10.1007/BF00820260
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：195 / 200
页数：6
相关论文
共 50 条
[21]   ELIMINATION OF MICROTWINS IN MBE-GROWN SILICON ON SAPPHIRE [J].
TWIGG, ME ;
RICHMOND, ED ;
PELLEGRINO, JG .
CHARACTERIZATION OF THE STRUCTURE AND CHEMISTRY OF DEFECTS IN MATERIALS, 1989, 138 :409-414
[22]   MBE-GROWN ALGAAS/GAAS HBTS ON INP SUBSTRATE [J].
ITO, H ;
ISHIBASHI, T .
ELECTRONICS LETTERS, 1987, 23 (08) :394-395
[23]   Spin lifetime measurements in MBE-grown GaAs epilayers [J].
Colton, JS ;
Kennedy, TA ;
Bracker, AS ;
Gammon, D .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (03) :445-452
[24]   LOCAL ORDER AND DEFECTS IN MBE-GROWN A-GAAS [J].
GREENBAUM, SG ;
TREACY, DJ ;
SHANABROOK, BV ;
COMAS, J ;
BISHOP, SG .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :133-138
[25]   SOME INVESTIGATIONS ON OVAL DEFECTS IN MBE-GROWN GAAS [J].
MEHTA, SK ;
MURALIDHARAN, R ;
SHARDA, GD ;
JAIN, RK .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (05) :635-640
[26]   Nanocrystals at MBE-grown GaN/GaAs(001) interfaces [J].
Zsebök, O ;
Thordson, JV ;
Ilver, L ;
Andersson, TG .
APPLIED SURFACE SCIENCE, 2000, 166 (1-4) :317-321
[27]   Effect of the starting surface on the morphology of MBE-grown GaAs [J].
Adamcyk, M ;
Pinnington, T ;
Ballestad, A ;
Tiedje, T .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3) :153-156
[28]   POSITRON STUDY OF VACANCY-TYPE DEFECTS INDUCED BY HEAVY DOPING INTO MBE-GROWN GAAS [J].
UEDONO, A ;
TANIGAWA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (02) :L346-L348
[29]   DEFECT ANALYSES OF MBE-GROWN ZNSE FILMS [J].
SANT, SB ;
WEATHERLY, GC ;
SMITH, RW .
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117) :527-532
[30]   Epitaxial characteristics of MBE-grown ZnTe thin films on GaAs (211)B substrates [J].
Ozceri, Elif ;
Tarhan, Enver .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (11)
12345