DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR

被引：128

作者：

MIYAZAWA, S

ISHII, Y

ISHIDA, S

NANISHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：853 / 855

页数：3

共 9 条

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