首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
EFFECT OF MECHANICAL-STRESS ON OFFSET VOLTAGES OF HALL DEVICES IN SI IC
被引:33
作者
:
KANDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
KANDA, Y
[
1
]
MIGITAKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
MIGITAKA, M
[
1
]
机构
:
[1]
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1976年
/ 35卷
/ 02期
关键词
:
D O I
:
10.1002/pssa.2210350252
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:K115 / K118
页数:4
相关论文
共 6 条
[1]
A HALL DEVICE IN AN INTEGRATED CIRCUIT
BOSCH, G
论文数:
0
引用数:
0
h-index:
0
BOSCH, G
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(07)
: 712
-
&
[2]
SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS
PFANN, WG
论文数:
0
引用数:
0
h-index:
0
PFANN, WG
THURSTON, RN
论文数:
0
引用数:
0
h-index:
0
THURSTON, RN
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
(10)
: 2008
-
&
[3]
ROTH H, 1962, J APPL PHYS, V31, P2397
[4]
PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
论文数:
0
引用数:
0
h-index:
0
SMITH, CS
[J].
PHYSICAL REVIEW,
1954,
94
(01):
: 42
-
49
[5]
REDUCTION OF MISALIGNMENT VOLTAGE IN HALL CRYSTALS
WOOD, C
论文数:
0
引用数:
0
h-index:
0
WOOD, C
SCHROEDER, GF
论文数:
0
引用数:
0
h-index:
0
SCHROEDER, GF
TISCHLER, O
论文数:
0
引用数:
0
h-index:
0
TISCHLER, O
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1961,
32
(02)
: 209
-
&
[6]
YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM
WORTMAN, JJ
论文数:
0
引用数:
0
h-index:
0
WORTMAN, JJ
EVANS, RA
论文数:
0
引用数:
0
h-index:
0
EVANS, RA
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(01)
: 153
-
+
←
1
→
共 6 条
[1]
A HALL DEVICE IN AN INTEGRATED CIRCUIT
BOSCH, G
论文数:
0
引用数:
0
h-index:
0
BOSCH, G
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(07)
: 712
-
&
[2]
SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS
PFANN, WG
论文数:
0
引用数:
0
h-index:
0
PFANN, WG
THURSTON, RN
论文数:
0
引用数:
0
h-index:
0
THURSTON, RN
[J].
JOURNAL OF APPLIED PHYSICS,
1961,
32
(10)
: 2008
-
&
[3]
ROTH H, 1962, J APPL PHYS, V31, P2397
[4]
PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
论文数:
0
引用数:
0
h-index:
0
SMITH, CS
[J].
PHYSICAL REVIEW,
1954,
94
(01):
: 42
-
49
[5]
REDUCTION OF MISALIGNMENT VOLTAGE IN HALL CRYSTALS
WOOD, C
论文数:
0
引用数:
0
h-index:
0
WOOD, C
SCHROEDER, GF
论文数:
0
引用数:
0
h-index:
0
SCHROEDER, GF
TISCHLER, O
论文数:
0
引用数:
0
h-index:
0
TISCHLER, O
[J].
REVIEW OF SCIENTIFIC INSTRUMENTS,
1961,
32
(02)
: 209
-
&
[6]
YOUNGS MODULUS SHEAR MODULUS AND POISSONS RATIO IN SILICON AND GERMANIUM
WORTMAN, JJ
论文数:
0
引用数:
0
h-index:
0
WORTMAN, JJ
EVANS, RA
论文数:
0
引用数:
0
h-index:
0
EVANS, RA
[J].
JOURNAL OF APPLIED PHYSICS,
1965,
36
(01)
: 153
-
+
←
1
→