DIFFUSION OF SUBSTITUTIONAL IMPURITIES IN SILICON AT SHORT OXIDATION TIMES - AN INSIGHT INTO POINT-DEFECT KINETICS

被引：181
作者：
ANTONIADIS, DA
MOSKOWITZ, I
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 10期
关键词：
D O I：
10.1063/1.330067
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：6788 / 6796
页数：9
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