ELECTRON FLYS EYE LENS ARTWORK CAMERA

被引：7

作者：

LEMMOND, CQ ^{[1
]}

BUSCHMAN.EC ^{[1
]}

KLOTZ, TH ^{[1
]}

WHITE, GM ^{[1
]}

机构：

[1] GE,CORP RES & DEV CTR,SCHENECTADY,NY 12301

来源：

关键词：

D O I：

10.1109/T-ED.1974.17972

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：598 / 603

页数：6

共 18 条

[1] ANGELLO SJ, 1970, IEEE T ELECTRON DEVI, VED17, P442
[2] BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844
[3] ELECTRON-SENSITIVE MATERIALS
BROYDE, B
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (09): : 2095 - +
[4] CHANG THP, 1969, 10TH P S EL ION LAS, P97
[5] COLE HS, 1972, Patent No. 3703402
[6] HIGH-RESOLUTION POSITIVE RESISTS FOR ELECTRON-BEAM EXPOSURE
HALLER, I
HATZAKIS, M
SRINIVASAN, R
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (03) : 251 - +
[7] FUNDAMENTAL ASPECTS OF ELECTRON-BEAM LITHOGRAPHY .1. DEPTH-DOSE RESPONSE OF POLYMERIC ELECTRON-BEAM RESISTS
HEIDENREICH, RD
THOMPSON, LF
FEIT, ED
MELLIARS.CM
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4039 - 4047
[8] HUGHES WC, 1969, 10 REC S EL ION LAS, P441
[9] LIVESAY WR, 1971, 71C23ED IEEE CAT, P505
[10] ELECTRON BEAM FABRICATION OF MICRON TRANSISTORS
MAGDO, S
HATZAKIS, M
TING, CH
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (06) : 446 - &