NUMERICAL-SIMULATION OF FLOW STRUCTURES AND INSTABILITIES OCCURRING IN A LIQUID-ENCAPSULATED CZOCHRALSKI PROCESS

被引：0

作者：

FONTAINE, JP ^{[1
]}

RANDRIAMAMPIANINA, A ^{[1
]}

BONTOUX, P ^{[1
]}

机构：

[1] INST MECAN FLUIDES MARSEILLE,CNRS,UM 34,F-13003 MARSEILLE,FRANCE

来源：

PHYSICS OF FLUIDS A-FLUID DYNAMICS | 1991年 / 3卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O3 [力学];

学科分类号：

08 ; 0801 ;

摘要：

This paper concerns the prediction and the analysis of the steady and time-dependent flow regimes that develop in liquid-encapsulated Czochralski (LEC) systems for material processing. The combined effects of temperature gradient and rotation on the flow and the temperature field, and especially the influence of the encapsulant layer (of Prandtl number 10 less-than-or-equal-to Pr(e) less-than-or-equal-to 3270) on the melt (Pr(m) = 0.015), are investigated using axisymmetric modeling. The accuracy of the solutions based on a finite element method is discussed. The effects of the Grashof number (up to Gr = 1.9 x 10(7)) and of the rotation Reynolds numbers of the crystal (up to \Re(s)\ = 10(4)) and of the crucible (up to Re(c) = 1.5 x 10(4)) are analyzed.

引用

页码：2310 / 2331

页数：22

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[31] PHOTOLUMINESCENCE STUDY OF RESIDUAL SHALLOW ACCEPTORS IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP [J].

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KATSUI, A ;

SUGII, K .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3841-3846

[32] ELECTRICAL CHARACTERISTICS OF ZN IN HEAVILY DOPED INP GROWN BY THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J].

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INOUE, T .

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[33] EFFECT OF CARBON CONCENTRATION ON THE ELECTRICAL-PROPERTIES OF LIQUID-ENCAPSULATED CZOCHRALSKI SEMIINSULATING GAAS [J].

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OBOKATA, T .

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[34] ISOTHERMAL MOTION IN A LIQUID-ENCAPSULATED CZOCHRALSKI CRYSTAL PULLER WITH AN AXIAL MAGNETIC-FIELD [J].

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[39] CONTOUR MAPS OF EL2 DEEP LEVEL IN LIQUID-ENCAPSULATED CZOCHRALSKI GaAs. [J].

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[40] THE DECAY OF CARBON LUMINESCENCE IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN SEMI-INSULATING GAAS [J].

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