TUNGSTEN SILICIDE FILMS DEPOSITED BY SIH2CL2-WF6 CHEMICAL-REACTION

被引:18
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作者
HARA, T
MIYAMOTO, T
YOKOYAMA, T
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D O I
10.1149/1.2096848
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:1177 / 1180
页数:4
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