CORRELATION BETWEEN BACKGROUND CARRIER CONCENTRATION AND X-RAY LINEWIDTH FOR INGAAS/INP GROWN BY VAPOR-PHASE EPITAXY

被引：16
作者：
MACRANDER, AT
CHU, SNG
STREGE, KE
BLOEMEKE, AF
JOHNSTON, WD
机构：
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 06期
关键词：
D O I：
10.1063/1.94853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：615 / 617
页数：3
相关论文
共 8 条
[1]  
CHU SC, UNPUB
[2]  
FAKTOR MM, 1980, CURRENT TOPICS MAT S, V6, pCH1
[3]  
FORREST SR, 1982, FIBEROPT TECHNOL 81
[4]  
JOHNSTON WD, 1980, 38TH ANN IEEE DEV RE
[5]   LATTICE MISMATCH STUDY OF LPE-GROWN INGAPAS ON (001)-INP USING X-RAY DOUBLE-CRYSTAL DIFFRACTION [J].
MATSUI, J ;
ONABE, K ;
KAMEJIMA, T ;
HAYASHI, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :664-667
[6]  
MATSUSHIMA Y, 1982, GAINASP ALLOY SEMICO, pCH16
[7]   MISORIENTATION AND TETRAGONAL DISTORTION IN HETEROEPITAXIAL VAPOR-GROWN III-V STRUCTURES [J].
OLSEN, GH ;
SMITH, RT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 31 (02) :739-747
[8]  
OLSEN GH, 1982, GAINASP ALLOY SEMICO, P18
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