COMPARISON OF SIO2 AND SI3N4 COATINGS ON GAAS USING TRANSMISSION ELECTRON-MICROSCOPY

被引：8

作者：

SEALY, BJ

RITCHIE, JM

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD,SURREY,ENGLAND

[2] UNIV SURREY,DEPT PHYS,GUILDFORD,SURREY,ENGLAND

来源：

THIN SOLID FILMS | 1976年 / 35卷 / 01期

关键词：

D O I：

10.1016/0040-6090(76)90246-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：127 / 130

页数：4

共 16 条

[1]

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[2] ION-IMPLANTED GAAS INJECTION LASER [J].

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HUNSPERGER, RG ;

LEE, A .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :627-628

[3]

Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802

[4]

BELL EG, TO BE PUBLISHED

[5] SOME 2ND-PHASE STRUCTURES IN GALLIUM-ARSENIDE ANNEALED AFTER IMPLANTATION WITH ZINC [J].

BENSON, RB ;

LITTLEJOHN, MA ;

PAO, PS ;

SARIN, HK .

APPLIED PHYSICS LETTERS, 1975, 27 (02) :69-71

[6] ELECTRICAL AND STRUCTURE SENSITIVE MEASUREMENTS ON ION IMPLANTED GAAS [J].

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TANSEY, JE .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 12 (01) :K9-&

[7]

BUTCHER D, TO BE PUBLISHED

[8] CHANGES IN ELECTRON CONCENTRATION OF DONOR-DOPED GAAS CRYSTALS CAUSED BY ANNEALING [J].

FULLER, CS ;

WOLFSTIRN, KB .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2287-+

[9]

HEMMENT PLF, 1974, 1974 P C ION IMPL SE, P27

[10] ION-IMPLANTED N+ CONTACTS FOR KA BAND GAAS GUNN-EFFECT DIODES [J].

LEE, DH ;

BERENZ, JJ ;

BERNICK, RL .

ELECTRONICS LETTERS, 1975, 11 (09) :189-191

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