LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES

被引：50

作者：

HARARI, E ^{[1
]}

WANG, S ^{[1
]}

ROYCE, BSH ^{[1
]}

机构：

[1] PRINCETON UNIV, MAT LAB, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1310 / 1317

页数：8

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