NITROGEN DOPING OF GAP DURING LPE GROWTH - KINETIC STUDY

被引：2

作者：

AKITA, K ^{[1
]}

NAKAI, S ^{[1
]}

KOTANI, T ^{[1
]}

DAZAI, K ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI 1015,KAMIKODANKA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 28卷 / 02期

关键词：

D O I：

10.1016/0022-0248(75)90244-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：263 / 266

页数：4

相关论文

共 11 条

[1] GAP LIQUID-PHASE EPITAXIAL-GROWTH USING A VERTICAL FURNACE SYSTEM
AKITA, K
NAKAI, S
KINUGASA, T
KOTANI, T
DAZAI, K
RYUZAN, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (05) : 631 - 635
[2] RECOMBINATION PROCESSES RESPONSIBLE FOR ROOM-TEMPERATURE NEAR-BAND-GAP RADIATION FROM GAP
BACHRACH, RZ
LORIMOR, OG
[J]. PHYSICAL REVIEW B, 1973, 7 (02): : 700 - 713
[3] DIFFUSION + SOLUBILITY OF ZINC IN GALLIUM PHOSPHIDE SINGLE CRYSTALS
CHANG, LL
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 374 - &
[4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
CUTHBERT, JD
THOMAS, DG
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
[5] EFFECT OF DONOR CONCENTRATION ON GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES
DIERSCHKE, EG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 321 - +
[6] IWANE G, 1970, DENKI TSUSHIN KENKYU, V19, P1523
[7] PHOTOCURRENT MEASUREMENTS ON GAP - N GREEN-LIGHT-EMITTING DIODES
KRESSEL, H
LADANY, I
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 224 - 226
[8] LADANY I, 1972, RCA REV, V33, P517
[9] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP
LOGAN, RA
WHITE, HG
WIEGMANN, W
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (01) : 55 - &
[10] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
HOPFIELD, JJ
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &