INTENSE AND SHARPLY STRUCTURED 1.54-MU-M ROOM-TEMPERATURE LUMINESCENCE OF ER-DOPED GAAS/ALGAAS STRUCTURES GROWN BY MBE

被引：8
作者：
CHARASSE, MN
GALTIER, P
HUBER, AM
GRATTEPAIN, C
CHAZELAS, J
HIRTZ, JP
机构：
[1] Thomson CSF-LCR, France
来源：
ELECTRONICS LETTERS | 1988年 / 24卷 / 23期
关键词：
D O I：
10.1049/el:19880996
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
11
引用
收藏
页码：1458 / 1460
页数：3
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