ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：14

作者：

SADLER, RA ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 09期

关键词：

D O I：

10.1063/1.94531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：865 / 867

页数：3

共 9 条

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[7] PROXIMATE CAPLESS ANNEALING OF GAAS USING A CONTROLLED-EXCESS AS VAPOR-PRESSURE SOURCE [J].

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[8] CAPPED VERSUS CAPLESS HEAT-TREATMENT OF MOLECULAR-BEAM EPITAXIAL GAAS [J].

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APPLIED PHYSICS LETTERS, 1982, 41 (08) :742-744

[9] ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

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APPLIED PHYSICS LETTERS, 1983, 42 (03) :270-271

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