TWO-DIMENSIONAL HOT-ELECTRON MODELS FOR SHORT-GATE-LENGTH GAAS-MESFETS

被引：79
作者：
SNOWDEN, CM [1 ]
LORET, D [1 ]
机构：
[1] STATE UNIV GHENT,IMEC,MICROELEKTR GRP 3-4,ELEKTROMAGNET ACUST LAB,B-9000 GHENT,BELGIUM
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期
关键词：
D O I：
10.1109/T-ED.1987.22909
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：212 / 223
页数：12
相关论文
共 24 条
[1]   CALCULATIONS OF HIGH-SPEED PERFORMANCE FOR SUBMICROMETER ION-IMPLANTED GAAS-MESFET DEVICES [J].
ABUSAID, MF ;
HAUSER, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :913-918
[2]  
BARTON T, 1986, 2ND P INT C SIM SEM, P528
[3]   TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].
BLOTEKJAER, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (01) :38-+
[4]   MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS [J].
CARNEZ, B ;
CAPPY, A ;
KASZYNSKI, A ;
CONSTANT, E ;
SALMER, G .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :784-790
[5]   ALCOHOL-CONSUMPTION AND BLOOD-PRESSURE - SURVEY OF THE RELATIONSHIP AT A HEALTH-SCREENING CLINIC [J].
COOKE, KM ;
FROST, GW ;
THORNELL, IR ;
STOKES, GS .
MEDICAL JOURNAL OF AUSTRALIA, 1982, 1 (02) :65-69
[6]   A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].
CURTICE, WR ;
YUN, YH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962
[7]   PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION .2. TRANSIENT-BEHAVIOR [J].
FARICELLI, JV ;
FREY, J ;
KRUSIUS, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) :377-388
[8]   HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS [J].
GRUBIN, HL ;
MCHUGH, TM .
SOLID-STATE ELECTRONICS, 1978, 21 (01) :69-73
[9]   A NUMERICAL APPROACH TO MODELING THE ULTRASHORT-GATE MESFET [J].
HIGGINS, JA ;
PATTANAYAK, DN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) :179-183
[10]   SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION [J].
HILSUM, C .
ELECTRONICS LETTERS, 1974, 10 (13) :259-260
123