DEFORMATION-FREE OVERGROWTH OF INGAASP DFB CORRUGATIONS

被引：27

作者：

NELSON, AW

WESTBROOK, LD

EVANS, JS

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 02期

关键词：

D O I：

10.1049/el:19830026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：34 / 36

页数：3

共 6 条

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[2] CW OPERATION OF DFB-BH GAINASP INP LASERS IN 1,5-MU-M WAVELENGTH REGION [J].

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ELECTRONICS LETTERS, 1982, 18 (01) :27-28

[3] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J].

MOSS, RH ;

EVANS, JS .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :129-134

[4] 1.5 MU-M RANGE INGAASP INP DISTRIBUTED FEEDBACK LASERS [J].

SAKAI, K ;

UTAKA, K ;

AKIBA, S ;

MATSUSHIMA, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (08) :1272-1278

[5]

UEMATSU Y, 1982, ELECTRON LETT, V18, P857, DOI 10.1049/el:19820581

[6] HIGH-QUALITY INP SURFACE CORRUGATIONS FOR 1.55-MU-M INGAASP DFB LASERS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY [J].

WESTBROOK, LD ;

NELSON, AW ;

DIX, C .

ELECTRONICS LETTERS, 1982, 18 (20) :863-865

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